1 Fabricage van nanofotonische structuren met gefocusseerde ionenbundels publieke verdediging Jonathan Schrauwen Promotor: Prof. Dries Van Thourhout V...
Figure 5.14: The oxide compaction next to the ridge generates a Nanofotonisch? Ionenbundels Verliezen tensile strain in the silicon, parallel to the substrate. This figure
Verliezen
Verliezen
Silicium Oxide
5.5 Electron beam trimming
Rek in Silicium
Schrauwen et al. Optics Express, vol. 16(6), p.3738 (2007)
47
Gecompacteerd oxide
Schrauwen et al. US Patent Pending (2007)
Figure 5.14: The oxide compaction next to the ridge generates a Nanofotonisch? Ionenbundels Verliezen tensile strain in the silicon, parallel to the substrate. This figure
Verliezen
Verliezen
Dit doctoraat:
SiOx
SiOx SiOx
Jodium blijft plakken
FIB: 5.5 Electron beam trimming
Nanofotonisch!
1. flexibel = prototypes
Figure 5.14: The oxide compaction next to the ridge generates a tensile strain in the silicon, parallel to the substrate. This figure shows the first principal strain obtained from a finite element simulation. Color key: dark blue = compressive strain 0.05; red = tensile strain 0.17; light blue as in the edges of the substrate represents strain 0.
2. precies 3. 3D structuren
48
Nanofotonisch? Ionenbundels
Verliezen Verliezen
Verliezen
better visualization) and the first principal strain in the case of a 10% compacted oxide layer with a thickness of 70 nm. The stress in the silicon lattice is between 1 and 3 GPa tensile, which is of the same order of magnitude than what can be achieved by depositing straining layers, such as demonstrated in Ref. [114] for the enhancement of the χ(2) non-linearity in silicon. This mechanism of compaction induced stress can therefore also be used to fabricate modulators in silicon.
Verliezen
It was reported [112] that the induced stress in the compacted oxide layer saturates upon high dose electron beam irradiation. However, we have not found reports of this effect for the energy and dose range considered in our experiments. Since a complete study was beyond the scope of this work, we have chosen to estimate the
Fabricage van nanofotonische structuren met gefocusseerde ionenbundels publieke verdediging
Jonathan Schrauwen Promotor: Prof. Dries Van Thourhout Vakgroep Informatietechnologie Faculteit Ingenieurswetenschappen 4 februari 2009
Ringresonatoren zijn filters
intensiteit
λ 52
Nanofotonisch?
Verliezen
Het internet
Toegangsnetwerk Metro netwerk
Kern netwerk
Optische gegevensoverdracht
53
Nanofotonisch?
Grotendeels elektronische gegevensoverdracht Evolutie naar Fiber To The Home = FTTH
